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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3729 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) *Wide Area of Safe Operation APPLICATIONS *Designed for TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base voltage ww w 1500 scs .i UNIT V 800 V 6 V 5 A 16 A 50 W .cn mi e IC Collector Current-Continuous ICM Collector Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3729 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; RBE= 800 V V(BR)EBO Emitter-Base Breakdown voltage IE= 10mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1.25A B 1.5 V ICES Collector Cutoff Current hFE DC Current Gain w w. w .cn mi cse is IC= 1A; VCE= 5V 8 VCE= 1500V; RBE= 0 0.5 mA isc Websitewww.iscsemi.cn 2 |
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